dependence of fermi level on carrier concentration and temperature
variation of fermi level in intrinsic semiconductor
The variation of fermi level with temperature for an intrinsic semiconductor is shown in the following figure.
At T = 0 K, the Fermi level lies exactly in midway between conduction band and Valence band.
At T > 0 K, the Fermi level rises slightly upward since mh > me.
At low temperatures, EF is practically independent of temperature. There is slight variation in EF in high temperature region.
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